Summary
Two-dimensional (2D) quantum materials, such as graphene and molybdenum disulfide, have great potential for use in future flexible and wearable electronics applications. With traditional silicon-based electronics nearing their theoretical performance limits, nano-electronics made from 2D quantum materials offer breakthrough opportunities for energy-efficient, wearable ubiquitous computation.
In this project, we will study integration of 2D material electronic devices with ferroelectric (FE) layers to simultaneously achieve low-power and high-speed devices through material and design optimization. Using density functional theory (DFT) calculations, we will select optimal 2D materials for use in the active channels of transistors and develop models to describe the intricate physics of negative capacitance field-effect transistors (NC FETs) based on the FE-dielectric-2D material heterostructure. In the end, the project will develop a numerical simulation tool for 2D material NC FETs and verify our simulations through collaboration with experimental groups.
Figure 1. (a) A schematic of a 2D negative capacitance FET and (b) its equivalent capacitance network in equilibrium (VD = 0 V).
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