Summary
Large-scale, fault-tolerant quantum computation requires precise and stable control of individual qubits. This project will use complementary metal-oxide-semiconductor (CMOS) technology to provide a cost-effective scalable platform for reliable and high-density control infrastructure for silicon spin qubits. We will use sub-micron CMOS technology to address device and circuit-level challenges and explore the integration of classical CMOS and quantum computing components. Since spin qubit control and measurement requires CMOS to operate at milli-Kelvin temperatures – far below the normal operating range of classical electronic devices – we will develop and calibrate compact models for MOSFETs at cryogenic temperatures, considering electrical, thermal and noise behaviors. These models will be used for cryo-CMOS design for spin qubit control operations, data readout, and communication, in a compact and scalable way at the node level. We hope to eventually implement integrated, readily scalable spin qubit control systems by bridging the classic CMOS and quantum platforms.
![](https://tqt.uwaterloo.ca/wp-content/uploads/2018/06/WeiFigure-300x148.jpg)
Figure 1. 65nm test chip for cryogenic device characterization
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