Tuning Spin-Exchange Interactions in Low-Dimensional Metal Halide Perovskites: A New Class of Semiconductor Quantum Materials
Summary Leakage current in electronic components is one of the limiting factors for the performance of conventional computers which use charges and currents as physical information carriers. Spintronics offers an alternative by using electron spin for information transfer, processing and storage, enabling the design of non-volatile computer memory and more energy-efficient electronic devices. In this […]
October 1, 2019
Scanning Tunneling Microscopy of Quantum Materials, Devices and Molecules
Summary This project advances our ability to characterize and study novel quantum materials, quantum devices, and even individual molecules at the atomic level. By combining Non-Contact Atomic Force Microscopy (NC-AFM), Scanning Tunneling Microscopy (STM) and scanning gate methods, we correlate spatial information with transport properties and can locally manipulate charge, spin and structural states. […]
January 28, 2019
Spin-transfer Torque Magnetic Random Access Memory for On-chip Spin Information Storage
Summary Leakage power in semiconductor memories, such as Dynamic Random Access Memory (DRAM) and Static Random Access Memory (SRAM), can be substantial and is one of the limits for scalability of classical electronics. This is attributed to the fact that the information stored is volatile, requiring constant refreshing, as well as reprogramming upon powering […]
August 6, 2018
Ultrafast Dynamical Studies of Valley-Based Qubits
Summary As monolayers, transition metal dichalcogenides (TMDCs) – such as tungsten diselenide (WSe2) – become direct-bandgap semiconductors capable of emitting light. Compared to conventional direct-bandgap semiconductors, such as III-V semiconductors like GaAs, excitons (quasiparticles made of an electron hole bound with an electron) and single-layer TMDCs (SL-TMDCs) have much stronger binding energy. Excitons and […]
June 29, 2018