There are small quantum systems over which we have very good control and which have long lifetimes. Examples include the phosphorous (P) defect in silicon (Si) and the nitrogen vacancy (NV) defect in diamond. With P defect in Si, we focus on improving our understanding of the hyperpolarization mechanism to better enable engineering of quantum systems that are highly and quickly polarizable with long coherence times. With the NV defect in diamond, we are developing control methods to suppress zero-field splitting, a miniaturized optics setup and a small package for the required microwave and control hardware. We also utilize the NV defect in diamond as a chemical sensing platform to enable sensing of a target molecule of choice. Advancements in these areas offer the potential to transform a host of technologies from gyroscopes to magnetometers.
Fabrication of Ultra Low Noise RF SQUID Amplifiers
A superconducting quantum interference device (SQUID) is an extremely sensitive magnetic field detector.
June 1, 2017
Implementing High-fidelity Quantum Gates in Multi-level Trapped Ions
Summary The scalability of quantum processors is limited by current error rates for single-qubit gates. By encoding more than a single bit of information within a single ion, multi-level “qudits” offer a promising method of increasing the information density within a quantum processor, and therefore minimizing the number of gates and associated error rates. […]
July 30, 2018
Chiral Quantum Antenna Based on Multilayer Metasurface
Summary Individual atoms can act as stationary qubits and thus serve as nodes in quantum computing networks or as memories for quantum repeaters. However, to successfully use qubits based on single atoms suspended in free space, photons emitted by a single atom need to be efficiently collected. Conventionally, this can be done with high […]
September 20, 2018
Ultrafast Dynamical Studies of Valley-Based Qubits
Summary As monolayers, transition metal dichalcogenides (TMDCs) – such as tungsten diselenide (WSe2) – become direct-bandgap semiconductors capable of emitting light. Compared to conventional direct-bandgap semiconductors, such as III-V semiconductors like GaAs, excitons (quasiparticles made of an electron hole bound with an electron) and single-layer TMDCs (SL-TMDCs) have much stronger binding energy. Excitons and […]
June 29, 2018