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    Si-Nanowire System

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    RAC 2

    Si-Nanowire System


     

    Grows high quality arrays of 10,000 silicon nanowires at high temperatures in a controlled environment. Each nanowire is 20 microns long, and 100 nm long. Used to produce nanowire arrays for use in other experiments.

     

    Our FirstNano Silicon Nanowire System grows single-crystal nanowires using an epitaxial method. The method begins with nanometre scale gold balls placed on a surface in a sealed chamber, and heated to 600° C. Next, the chamber is flooded with Silane (SiH4) gas. When the Silane comes in contact with the gold balls, the gold (Au) ball strips off the silicon – forming a Si-Au alloy – and releases 2H2 gas molecules. Once the gold ball is saturated as Si-Au, it extrudes pure silicon downwards, forming a silicon nanowire that lifts the gold ball as it grows.

     

    Equipment

    Si-Nanowire System

    Supplier

    Firstnano, CVD Equipment Corporation

    Location

    RAC 2

    Capability

    Fabrication/Deposition

    Principal Investigator (PI) or Team Coordinator

    Taso Alkiviades

    More Info

    Firstnano

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