Spin-transfer Torque Magnetic Random Access Memory for On-chip Spin Information Storage
Summary Leakage power in semiconductor memories, such as Dynamic Random Access Memory (DRAM) and Static Random Access Memory (SRAM), can be substantial and is one of the limits for scalability of classical electronics. This is attributed to the fact that the information stored is volatile, requiring constant refreshing, as well as reprogramming upon powering […]
August 6, 2018
