Simulated coherent electron shuttling in silicon quantum dots
Abstract Shuttling of single electrons in gate-defined silicon quantum dots is numerically simulated. A minimal gate geometry without explicit tunnel barrier gates is introduced and used to define a chain of accumulation mode quantum dots, each controlled by a single gate voltage. One-dimensional potentials are derived from a three-dimensional electrostatic model and used to construct […]
Read MoreSelf-driven oscillation in Coulomb blockaded suspended carbon nanotubes
Abstract Suspended carbon nanotubes are known to support self-driven oscillations due to electromechanical feedback under certain conditions, including low temperatures and high mechanical quality factors. Prior reports identified signatures of such oscillations in Kondo or high-bias transport regimes. Here, we observe self-driven oscillations that give rise to significant conduction in normally Coulomb blockaded low-bias transport. […]
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